Insulated-Gate Bipolar Transistor (IGBT) Accelerated Aging

Preliminary data from thermal overstress accelerated aging using the aging and characterization system. The data set contains aging data from 6 devices, one device aged with DC gate bias and the rest aged with a squared signal gate bias. Several variables are recorded and, in some cases, high-speed measurements of gate voltage, collector-emitter voltage, and collector current are available. The data set is provided by the NASA Prognostics Center of Excellence (PCoE).

Data and Resources

Additional Info

Field Value
Maintainer Christopher Teubert
Last Updated April 23, 2025, 22:14 (UTC)
Created February 19, 2025, 02:28 (UTC)
accessLevel public
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identifier https://data.nasa.gov/api/views/7wwx-fk77
issued 2022-11-22
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modified 2022-11-22
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